Silicon-On-Chip Photodetectors with Nano-structures
Novel photodetector structures are being investigated, with novel functionalities enabled by nano-structures. Absorption efficiency can be close to 100% even above 850 nm where conventional CMOS sensor has poor responsviity. By using a MEMS-actuated nano-structure, the defection wavelength can be sweated over 100 nm. These novel detectors are attractive for applications in communications, sensors, and disease diagnosis chips.
- Silicon-on-chip wavelength-selective photodetector: Specific wavelength and polarization can be detected with a quantum efficiency close to 100%.
- Wavelength-tunable photodetector: The detection wavelength can be made tunable by using MEMS technology. On-chip spectruDetecting a specific wavelength which can be tuned.
- Perfect absorption photodetector: Absoprtion efficiency can be close to 100% at a wavelength above 850 nm where the conventional CMOS sensor has poor responsibilities.
References
- Supannee Learkthanakhachon, Alireza Taghizadeh, Gyeong Cheol Park, Kresten Yvind, and Il-Sug Chung*, “Hybrid III-V/SOI resonant cavity enhanced photodetector,” Optics Express 24 (15), 16512-16519 (Jul 13 2016). First demo of an Si-on-chip hybrid resonant-cavity PD. [link]
- Alireza Taghizadeh*, Are Rasoulzadeh Zali, Il-Sug Chung, and Mohammad K. Moravvej-Farshi, “All-Si photodetector for telecommunication wavelength based on sub wavelength grating structure and critical coupling,” AIP Advance 7, 095019 (Sep 20, 2017). [link]
- Thor Ansbæk, Il-Sug Chung, Elizaveta S. Semenova, Ole Hansen and Kresten Yvind*, “Resonant MEMS tunable VCSEL,” IEEE J. Sel. Top. Quant. Electron. 19(4) 1702306 (Jul/Aug, 2013). [link]